GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp
GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp
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$569.00 USD
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$569.00 USD
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SKU: : \GPSc50D045C1
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- GaP single crystal wafer,
- Size: 2" diameter(±0.15mm) x 0.45mm(±0.05mm),
- Doping: S-doped,
- Conducting type: N-type,
- Orientation: (111)±30'
- Edge Orientation: (110)±1°
- Polished:One side polished.
- Surface finish (RMS or Ra) : < 8A
Typical Physical Properties |
||
Crystal Structure |
Cubic. a =5.4505 ?/FONT> |
|
Growth Method |
CZ (LEC) |
|
Density |
4.13 g/cm3 |
|
Melt Point |
1480 oC |
|
Thermal Expansion |
5.3 x10-6 / oC |
|
Dopant |
S doped |
undoped |
Crystal growth axis |
<111> or <100> |
<100> or <111> |
Conducting Type |
N |
N |
Carrier Concentration |
2 ~ 8 x1017 /cm3 |
4 ~ 6 x1016 /cm3 |
Resistivity |
~ 0.03 W-cm |
~ 0.3 W-cm |
EPD |
< 3x105 |
< 3x105 |
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