GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating
GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating
Low stock: 7 left
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$655.00 USD
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$655.00 USD
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SKU: : \GPUc50D045C2US
- GaP single crystal wafer,
- Size: 2" diameter(+/_0.15mm) x 0.45mm(+/_ 0.05mm),
- Doping: undoped,
- Conducting type: N-type,
- Orientation: (111)+_30'
- Flats: SEMI: PF:<110>
- SF:<112>
- Mobility: 150 cm^2/Vs
- Resistivity: >7 x10^7 ohm.cm
- Carrier Concentration: 9 x10^8 cm^-3
- EPD:<=8x10^4 cm^-2
- Polished: two sides polished.
- Surface finish (RMS or Ra) : < 8A
Typical Physical Properties |
||
Crystal Structure |
Cubic. a =5.4505Å |
|
Growth Method |
CZ (LEC) |
|
Density |
4.13 g/cm3 |
|
Melt Point |
1480 oC |
|
Thermal Expansion |
5.3 x10-6 / oC |
|
Dopant |
S doped |
undoped |
Crystal growth axis |
<111> or <100> |
<100> or <111> |
Conducting Type |
N |
N |
Carrier Concentration |
2 ~ 8 x1017 /cm3 |
4 ~ 6 x1016 /cm3 |
Resistivity |
~ 0.03 ohm-cm |
~ 0.3 ohm-cm |
EPD |
< 3x105 |
< 3x105 |
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