GaSb Wafer (100), undoped, 2" Dia x0.5 mm, two sides polished - GSUa50 – MTI Online Store

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GaSb Wafer (100), undoped, 2" Dia x0.5 mm, two sides polished - GSUa50D05C2US

GaSb Wafer (100), undoped, 2" Dia x0.5 mm, two sides polished - GSUa50D05C2US

Minimum Order: $20 (equipment), $100 (crystals)

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Low stock: 7 left

$1,555.00 USD

$1,555.00 USD

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SKU: : \GSUa50D05C2US

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Wafer Specifications:.

Size: 2" diameter x 0.5mm,
Orientation: (100)
Dopping: undoped,
Conducting type: P-type.
Polish: two sides polished by CMP
Roughness: < 0.5nm
Packing: 1000 class clean room in a single wafer container

Typical Properties

Crystal Structure: cubic a = 6.095 ??0‡3
Density: 5.619 g/cm³
Melting point: 710 ^oC
Grown by a special LEC technique , EPD :<10000/cm²
Thermal Expansion: 6.1 x 10 ^-6 /oK
Thermal conductivity: 270 mW / cm.k at 300K

Dopant	Type	Carrier Concentration ( cm^-3)	Mobility ( cm²/V.Sec)	Resistivity ( ohm-cm )	EPD (cm^-2)
Undoped	P	1.0~2.0 x 10¹⁷	600 ~ 800	~0.1	<10000
Zn	P⁺	2.0~5.0 x 10¹⁸	300 ~ 500	~0.004	<10000
Te	N	2.0~6.0 x 10¹⁷	2500 ~ 3500	~0.05	<10000
High Resistivity	P or N	1.0~2.0 x 10¹⁶	460	~ 1.0	<10000

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