• GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp
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GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

Low stock: 4 left

$799.00 USD
$799.00 USD
Sale Email for Lead Time

SKU: GSUcB50D05C2US
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Wafer Specifications:. 

  • Size:                      2" diameter x 0.5 mm,
  • Orientation:          (111)-B
  • Flats:                   SEMI   PF  <01-1>.  SF<0-11>
  • Dopping:              undoped,
  • Conducting type:  P-type.
  • Polish:                  Two side EPI -ready polished
  • Resistivity:            N/A
  • Mobility:                 600-700cm^2/Vs
  • Carrier concentration: (1-3)x10^17 ohm.cm
  • EPD   :                  <2000 cm^-2
  • Packing:               1000 class clean room in a single wafer container     
  • Surface finish (RMS or Ra) :   < 5A       

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000















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