Specifications

• Growing Method:             CZ
• Wafer Size:                  10x10x0.5 mm
• Surface Polishing:          one side epi polished
• Orientation:                   (111)
• Surface roughness:        < 8 A ( by AFM)
• Doping:                         Undoped
• Conductor type:             N-type
• Resistivity:                     >50 Ohms/cm
• EPD:                             N/A
• Package:                       under 1000 class clean room  in wafer container     
• 
  
  

  Related Product
  
  

  Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater