• Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm-1
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Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

Low stock: 7 left

$25.00 USD
$25.00 USD
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SKU: GEGac050505S1R0005
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Specifications

  • Growing Method:             CZ
  • Wafer Size:                  5x5x0.5 mm
  • Surface Polishing:          one side epi polished
  • Orientation:                   (111)
  • Surface roughness:        < 8 A ( by AFM)
  • Doping:                         Ga-doped
  • Conductor type:             P-type
  • Resistivity:                    0.005-0.01 Ohms/cm
  • EPD:                             N/A
  • Package:                       under 1000 class clean room  in wafer container     
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