Ge Wafer Specification

• Growing Method:                CZ
• Orientation:                        (100) +/- 0.23 Deg.
• Wafer Size:                        2" dia x  500 microns  
• Surface Polishing:              one side epi polished
• Surface roughness:             RMS or Ra< 5 A ( by AFM)
• Doping:                              Sb Doped
• Conductor type:                  N-type
• Resistivity:                         2.5-2.7 ohm-cm (If you would like to measure the resistivity accurately, 
                                          please order our Portable 4 Probe Resistivity Testing Instrument.)                         
• Package:                           under 1000 class clean room      

Typical Properties:

• Structure:                          Cubic, a = 5.6754 A
• Density:                             5.323 g/cm3 at room temperature
• Melting Point:                     937.4 ^oC
• Thermal Conductivity:          640