Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:0.1-0.5ohm.cm
Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:0.1-0.5ohm.cm
Low stock: 6 left
Price: RFQ
SKU: : \GESbe101D05C2R01US
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Ge Wafer Specification
- Growing Method: CZ
- Orientation: (110) +/-0.5 Deg.
Major Flat: <111> - Wafer Size: 4" dia x 500 microns
- Surface Polishing: two sides epi polished
- Surface roughness: < 30 A ( by AFM)
- Doping: Sb Doped
- Conductor type: N-type
- Resistivity: 0.1-0.5Ohms.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - EPD: <100 /cm^2
- Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754Å
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
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