Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (110) +/-0.5 Deg.
  Major Flat:                        <111>
  
• Wafer Size:                      4" dia x  500 microns  
• Surface Polishing:            two sides epi polished
• Surface roughness:         RMS or Ra:~ 10 A(By AFM)
• Doping:                           Sb Doped
• Conductor type:                N-type
• Resistivity:                       1-5 Ohms.cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD:                               <100 /cm^2
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640