Ge Wafer Specification

• Growing Method:            CZ
• Orientation:                    (211) +/_0.5 Deg.
• Wafer Size:                    2" dia x  450 microns  
• Surface Polishing:           two sides epi polished
• Surface roughness:          < 8 A ( by AFM)
• Doping:                          Undoped
• Conductor type:              N-type
• Resistivity:                     > 45 Ohms/cm (If you would like to measure the resistivity accurately, 
                                      please order our Portable 4 Probe Resistivity Testing Instrument.)                            
• Package:                      under 1000 class clean room      

Typical Properties:

• Structure:                       Cubic, a = 5.6754 A
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640