The HVMSS-SPC-1 is a magnetron sputtering gun with a straight head, which is capable of accommodating a wide range of 1" Dia. sputtering sources. Its compatibility with DC, pulsed DC and RF power supplies ensures maximum versatility and extends its usage to various sputtering targets (e.g. metallic, electrically insulating, magnetic or non-magnetic, and etc).  Quick Connector fixture is included to make the installation of this apparatus is straight forward and it also offers simple target changes that do not require any target bonding.  

Features	High field strength and uniform field profile achieved via use of electromagnetic finite element calculations in the design of the permanent magnetic assembly Low impedance sputtering head and standard RF connector easily match and interface with a wide range of DC and RF sputtering power supplies. Easy installation with common tools. Magnets are isolated from cooling water with a protective coating against corrosion to maximize durability. 1" Copper Backing Plate  (EQ-CBP-1) is included. The sputtering source is bakeable up to 200°C Standard ¾” OD Shaft Accepts 1/8” (3 mm) thick targets; 1 piece of the copper target is included as a standard accessory
Sputtering Gun	Sputtering Head Diameter:         1.82" (46.3mm) Target Diameter:                         1.0 ± 0.02" (25.4mm) Maximum Target Thickness:       1/8" (3mm)  Magnets:                                     NdFeB Rare Earth Magnet Shaft Diameter:                           3/4" O.D.
Electrical Connector	Standard SL16 cable Connector   ( Pic.1 ) Optional 148 cm RF cable with SL6 connector (click Pic. 2 to order)
Power Requirement	DC (Max.)  250 W RF (Max.)  100 W
Cathode Sputtering Current	3 Amp (Max.)
Cathode Sputtering Voltage	200 - 1,000 V
Operating Pressure Range	~1 mTorr to 1 Torr
Sputtering Thickness Uniformity Curve	NOTE: The Normalized Film Thickness graph above was obtained from depositing a ~200-nm thick film with a PVD HV Magnetron sputtering gun using a 1-inch Cu target. Measurements were performed using a 4-point probe in two mutually perpendicular directions (X, Y) across the wafer surface. The film was deposited onto an oxidized non-rotating Si wafer under the following conditions:  150 Watts DC in 10 mTorr (Ar) The distance of 3-inches (75-mm) from target to substrate
Water Cooling (Required)	Flow Rate requirement:               1/2 GPM, filtered Water Inlet Temperature:             <20 C Water hook up:                            0.25" O.D Tube. Please inform us the tube size of your water chiller, we can pre-install the fitting for you at extra cost.
Electrical & Mounting Fittings	Electrical Connector:                   Standard HN type (DC and RF) High Vacuum Quick Connector is pre-installed for immediate use, which can install the sputtering source onto the baseplate (up to 1” thick) of a vacuum chamber with  1” diameter through-hole easily.
Vacuum Flange with Feedthrough (Optional)	6" CF flange with a high vacuum feedthrough is available upon request at extra cost. The sputtering head can be easily installed on the 6'' CF vacuum flange through the quick disconnector. The height position of the sputtering gun can be manually adjusted inside the vacuum chamber.
Plasma sputtering target	1" Copper Backing Plate  (EQ-CBP-1) is included. Please click to order other 1" Dia. Plasma sputtering target
Overall Length	14 inches
Net Weight	3 lbs
Optional Accessories	Digital Temperature Controlled Recirculating Water Chiller with 6 Liters Tank, 16L / min Flow is available at extra cost, please order separately, click the pic below left to order. MTI offers DC and RF power source as well as vacuum chamber  for DIY sputtering system ( click Pic below to order )
Operation Instructions
Warranty	One year limited with lifetime support
	Click the picture above for more products.
Info on Sputtering Coating	DC Sputtering   Also known as Direct Current Diode Sputtering and it is the most basic type of sputtering. Ionized Argon cations are accelerated towards the cathode with the use of a negative bias voltage. Upon the collision of Argon with the cathode (where the target material is placed), species from the target source are ejected and subsequently get deposited on the substrate.   RF Sputtering   It is ideal for use with electrically insulating or dielectric target materials or substrates such as ceramics. It allows a much lower Argon pressure than the DC counterpart (1-15 mTorr vs 100 mTorr) to be used, which in turn reduces the concentration of gas impurities and in the chamber while also improving the deposition's line of sight due to fewer gas collisions. Magnetron Sputtering   This sputtering feature greatly increases the sputtering rate by concentrating ions and electrons in a confined region above the cathode. By trapping electrons near the target material using a magnetic field, the ionization of Argon is greatly increased while also further lowering the gas pressure to 0.5 mTorr to improve the deposition's line of sight even more.     The characteristics above offer improved deposition rate decreased impurities of coatings and allow for operating under lower substrate temperatures in depositions. This type of sputtering can be used in conjunction with a DC or RF power source.