2" InAs wafer (P type)

• 2" InAs wafer    
• P Type, Zn doped
• Size:                     2" dia x0. 5 mm +/-20 microns
• Orientation:          <100> +/-0.5⁰
•  Polishing:             one-side polishd
• Packing:                 in 1000 class clean room with wafer container

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5 ^o
• Orientation Flat                                                 <110> <-110>                    
• Doping                                                                Zn doped
• Conductivity type                                               P type
• Carrier Concentration                                        (3-7)E18/ cm³
• Mobility                                                              100-500 cm²/V.S  
• EPD                                                                  <10000 / cm ²

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