InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US
InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US
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$545.00 USD
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SKU: : \IASa50D05C1US
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2" InAs wafer (Ntype)
- 2" InAs wafer (S-doped, Ntype)
- Size: 2" dia x 500 micron +/-25 microns
- Orientation: <100> +/-0.50
- Polishing: One-side polishd
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (100) +/- 0.5 o
- Orientation Flat SEMI
- Doping S-doped
- Conductivity type N type
- Carrier Concentration (1-30)x10^17/ cm3
- EPD <50000 cm^-2
- Resistivity:
- Mobility: <10000 cm^2/vs
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