InAs, (100), Sn doped, N-type, 10mmx10mm x 0.5mm 1sp - IASna101005S1
InAs, (100), Sn doped, N-type, 10mmx10mm x 0.5mm 1sp - IASna101005S1
Minimum Order: $20 (equipment), $100 (crystals)
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$225.00 USD
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$225.00 USD
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SKU: : \IASna101005S1
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- Growth Method: LEC
- Orientation: (100) ±0.5°
- Orientation Flat: N/A
- Doping: Sn-doped
- Conductivity Type: N-type
- Carrier Concentration: (3–10) × 1017 cm3
- Mobility: > 11,000 cm2/(V·s)
- EPD: < 15,000/cm2
- Standard Thickness: 500 ±20 mm
- Size: 10 × 10 mm
- Polish: One side
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