InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp - IASna101005S1
InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp - IASna101005S1
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$99.00 USD
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SKU: : \IASna101005S1
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- Growth method LEC
- Orientation (100)± 0.5 Deg
- Orientation FlatN/A
- DopingSn doped
- Conductivity typeN type
- Carrier Concentration (3-10)E17cm3
- Mobility >11000 cm2/V.S
- EPD <15000 / cm 2
- Standard thickness 500 ±20 mm
- Size 10x10 mm
- Polishone-side
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