2" InAs wafer (P type)

• 2" InAs wafer    
• P Type, Zn doped
• Size:                 10x10x0.45 mm +/-20 microns
• Orientation:          <111>A
•  Polishing:             one-side polishd
• Resistivities:         5.1x10^-2 ohm-cm
• Packing:                 in 1000 class clean room with wafer container

Properties

• Growth method                                                 LEC
• Orientation                                                         (111) A 
• Orientation Flat                                                 SEMI                    
• Doping                                                                Zn doped
• Conductivity type                                               P type
• Carrier Concentration                                     6.4E17/ cm³
• Mobility                                                              192 cm²/V.S  
• Resistivity                                                          5.1x10^-2  Ohm-Cm
• EPD                                                                    1.9E4 / cm ²

 
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