InAs (511), S doped, ellipse shape wafer (area >30mm dia), 1sp - IAS51 – MTI Online Store

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Total Solution for Materials ResearchDosing, Mixing, Pressing, Firing, Melting, Cutting, Polishing, Coating, Testing, and Automation Integration

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InAs (511), S doped, ellipse shape wafer (area >30mm dia), 1sp - IAS511ellipses

InAs (511), S doped, ellipse shape wafer (area >30mm dia), 1sp - IAS511ellipses

Minimum Order: $20 (equipment), $100 (crystals)

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Low stock: 8 left

$719.00 USD

$719.00 USD

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SKU: : \IAS511ellipses

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Growth Method: LEC
Orientation: (511) ±0.5°
Orientation Flat: N/A
Doping: S-doped
Conductivity Type: N-type
Carrier Concentration: 7 × 10¹⁷–1 × 10¹⁸/cm³
Mobility: > 10,000 cm²/(V·s)
EPD: < 2 × 10⁴/cm²
Standard Thickness: 500 ±20 µm
Size: Elliptical shape, area > 30 mm diameter
Polish: One side

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