InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes
Low stock: 8 left
Regular price
$220.00 USD
Regular price
Sale price
$220.00 USD
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SKU: : \IAS511ellipes
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- Growth method LEC
- Orientation (511) ± 0.5 Deg
- Orientation Flat N/A
- Doping S doped
- Conductivity type N type
- Carrier Concentration <7E17 ~ 1E18 / cm3
- Mobility >10000 cm2/V.S
- EPD <2E4 / cm 2
- Standard thickness 500 ± 20 mm
- Size ellipse shape, (area > 30mm diameter)
- Polish one-side
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