• InP ,Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp
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InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp

InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp

Low stock: 8 left

$1,399.00 USD
$1,399.00 USD
Sale Email for Lead Time

SKU: IPZna76D06C1US
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InP single crystal wafer
Orientation:                      (100)+/- 0.5 degree
Primary Flat:                    US(01-1)+/-0.5 degree
Secondary Flat:                  US(011)
Size:                                3" diameter x 0.625 mm
Growing Method:               VGF
Doping:                            Zn doped
Conducting type:               S-C
Polish:                              one side  polished
Resistivity:                        (4.19-4.73)E-2 ohm.cm
Mobility:                           72-74 cmE2/V.S
EPD:                                <5000 /cmE2Carrier
Concerntration:                 (1.79-2.07)E18 /cmE-3
Ra(Average Roughness) :  < 0.4 nm

EPI ready surface and packing


 

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