InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US
InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US
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SKU: : \IPSa101005S2US
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InP single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 10x10 x 0.5 mm
Doping: S- doped
Conducting type: S-C-N
Polish: one side polished
Resistivity: (1.8-2.0)x10^-3 ohm.cm
Mobility: 1850-1870 cmE2/V.S
EPD: <2000 /cmE2
Carrier Concerntration: (1.7-1.9) x10^18 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 10x10 x 0.5 mm
Doping: S- doped
Conducting type: S-C-N
Polish: one side polished
Resistivity: (1.8-2.0)x10^-3 ohm.cm
Mobility: 1850-1870 cmE2/V.S
EPD: <2000 /cmE2
Carrier Concerntration: (1.7-1.9) x10^18 /cm^3
Ra(Average Roughness) : < 0.4 nm
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