InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US
InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US
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SKU: : \IPFecA50D035C1US
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: Fe doped
- Conducting type: Semi-Insulating
- Resistivity:(1.91-5.02)E7 ohm.cm
- Mobility:2230-2870 cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
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