• InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x (0.3-0.35) mm wafer, 1sp - IPZncA50D035C1US
1 1

InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US

InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US

Low stock: 10 left

$795.00 USD
$795.00 USD
Sale Email for Lead Time

SKU: IPZncA50D035C1US
View full details
  • InP  single crystal wafer
  • Growing Method: VGF
  • Orientation: (111)A
  • Size: 2" diameter x (0.3-0.35) mm
  • Doping: Zn- doped
  • Conducting type: S-C-P
  • Polish: one side  polished
  • Resistivity:(3.24-3.29)x10^-1 ohm.cm
  • Mobility: 105-110 cm^2/V.S
  • EPD: N/A
  • Carrier Concerntration:(1.76-1.81) x10^17 /cm^3
  • Ra(Average Roughness) : <4 nm
  • EPI ready surface and packing

Related Products 

Other InP 

 InSb

 		Other InAs

 		GaAs


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces

 

×

Manufacturer Part Number: