Skip to product information
1 of 1

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US

Low stock: 7 left

Regular price $1,620.00 USD
Regular price Sale price $1,620.00 USD
Sale Email for Lead Time

SKU: : \ISTea50D045C1US

View full details

2" InSb  wafer   (N type, Te Doped )

  • Size:                      2" dia x 0.45 (+/- 0.025 ) mm  thick
  • Orientation:         <100> +/-0.5 o
  •  Polishing:            one side  polishd
  • Packing:               Sealed in nitrogen in single wafer container  at 100 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 Two reference flates at    <100>                
  • Doping                                                               Te
  • Conductivity type                                               N type
  • Carrier Concentration (@77 K)                     (0.19-0.50)E18/cc @77K
    Resistivities (ohm-cm):                       0.0005-0.001 
    Mobility (cm^2/Vs) (@77K):                 ( 3.58-5.60 )E +4  
    EPD ( / cm^2)                                     < 200                    


 

Manufacturer Part Number: