InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US
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$1,620.00 USD
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$1,620.00 USD
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SKU: : \ISTea50D045C1US
2" InSb wafer (N type, Te Doped )
- Size: 2" dia x 0.45 (+/- 0.025 ) mm thick
- Orientation: <100> +/-0.5 o
- Polishing: one side polishd
- Packing: Sealed in nitrogen in single wafer container at 100 class clean room
Properties
- Growth method LEC
- Orientation (100) +/- 0.5 o
- Orientation Flat Two reference flates at <100>
- Doping Te
- Conductivity type N type
- Carrier Concentration (@77 K) (0.19-0.50)E18/cc @77K
Resistivities (ohm-cm): 0.0005-0.001
Mobility (cm^2/Vs) (@77K): ( 3.58-5.60 )E +4
EPD ( / cm^2) < 200
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