2" InSb  wafer   (N type, Te Doped )

• Size:                      2" dia x 0.5 (+/- 0.025 ) mm  thick
• Orientation:         <100> +/-0.5 ^o
•  Polishing:            two sides  polishd
• Packing:               Sealed in nitrogen in single wafer container  at 100 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5 ^o
• Orientation Flat                                                 Two reference flates at    <100>                
• Doping                                                               Te
• Conductivity type                                               N type
  
• Carrier Concentration (@77 K)                     (2-6)E17/cc @77K
  
  Mobility (cm^2/Vs) (@77K):                    3.9E 4  
  EPD ( / cm^2)                                          < 200                    
  
  
  

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