2" InSb  wafer   (N type, undoped)

•  Size:                      2" dia x 0.5mm  thick
• Orientation            <100> +/-0.5^o  with two reference flats
•  Polishing:             one-side side polishd ( back side etched )
• Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5^o
• Orientation Flat                                                 <110>.<110>                 
• Doping                                                                Undoped
• Conductivity type                                               N type
• Carrier Concentration                                    <1E15@77K  
  
• Mobility                                                               >4E5 cm^2/ v.s
• EPD                                                                   <300cm^-2

For the quality test reports, please click here.


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