InSb   substrate 10x10x0.5 mm   (N type, undoped)

•  Size:                    5x5x0.5 mm
• Orientation            <100> +/-0.5^o 
•  Polishing:             one-side side polished ( back side etched )
• Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5^o                                     
• Doping                                                                Undoped
• Conductivity type                                               N type
• Carrier Concentration                                     (0.1- 0.85)E15 @77K
• Mobility                                                               (5.0-3.5)E5 cm²/Vs
• EPD                                                                    <200 / cm ²

For the quality test reports, please click here.

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