2" InSb  wafer   (N type, Te-doped)

•  Size:                      2" dia x 0.5mm  thick with thickness tolerance +/- 25 um
• Orientation            <111>A +/-0.5^o  with two reference flats
•  Polishing:             one-side  polishd ( back side etched )
• Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 CZ
• Orientation                                                         (111) A +/- 0.5^o
• Orientation Flat                                                 <0-1-1> .<0-11>                      
• Doping                                                                Te-doped
• Conductivity type                                               N type
• Resistivity:                                                         (1.1-3.3) E-4 ohm.cm
• Carrier Concentration                                     (1.0E14 - 1.0 E15) cm-3
• Mobility                                                              >E5 cm²/Vs
• EPD                                                                    < 1 E3  / cm -2

    

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