2" InSb  wafer   (N type, Te-doped)

•  Size:                      2" dia x 0.45-0.5mm  thick with thickness tolerance +/- 25 um
• Orientation            <111>B +/-0.5^o  
•  Polishing:             one-side side(Sb) polishd ( back side etched )
• Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         <111>B  +/- 0.5^o               
• Doping                                                                Te-doped
• Conductivity type                                               N type
• Carrier Concentration                                      (5.0E17 - 2.0E18) cm-3 @77K
• Mobility                                                                24,000-34,000 cm²/Vs
• EPD                                                                    <1.0 E+3  / cm -2

   

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