2" InSb  wafer   (N type, undoped)

•  Size:                      2" dia x 0.5mm  thick
• Orientation            <111>B +/-0.5^o  with two reference flats
•  Polishing:            one side  polished ( back side etched )
• Packing:               Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (111)B  +/- 0.5^o
• Orientation Flat                                                          
• Doping                                                                Undoped
• Conductivity type                                               N type
• Carrier Concentration                                    5E13-3E14 @77K
• Mobility                                                            >400000 cm^2/V.s   
• EPD                                                                <500 cm^-2