LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well-suitable for low-loss microwave and dielectric resonance applications.

Substrate Specifications:

• Wafer Size:    0.5" dia +/- 0.5 mm   x  1.0 thickness +/-0.05 mm
• Wafer Orientation:   (100) +/-0.5 Deg 
• Edge Orientation:   <001> +/-1 Deg  
• Polishing:   CMP polished with free sub-surface damaged
• Surface finish (RMS or Ra) :  < 10A
• Package:    Under 1000 class clean room, and in a 100-grade plastic bag in a wafer container.
• Lattice Constant   a=3.792Å Pseudo cubic )
• Warning:     LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below
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• For detailed physical properties of LaAlO3 crystal, please click here
• For a typical crystal rocking curve, please click here
• For MSDS, please click here
•  For the AFM of LaAlO3, please click here.
•  If you need a certificate of analysis, please click here

Typical Physical Properties

Crystal Structure

Pseudo Cubic    a=3.792Å 

Growth Method

Czochralski

Density

6.52   g/cm³

Melt Point

2080 ^oC        

Thermal expansion

 10 (x10^-6/ ^oC)

Dielectric Constant

~ 25 

Loss Tangent at 10 GHz

~3x10^-4 @ 300K ,       ~0.6 x10^-4 @77K

Color and Appearance

Transparent to Brown based on annealing condition. Visible twins on the polished substrate

Chemical Stability

Insoluble in mineral acids at 25 ^oC and soluble in H3PO3 at> 150 ^oC