LaAlO₃ single crystal provides a good lattice match to many materials with a perovskite structure. It is an excellent substrate for epitaxial growth of high-T_c superconductors, as well as magnetic and ferroelectric thin films. The dielectric properties of LaAlO₃ crystal are well suited for low-loss microwave and dielectric resonance applications.

Substrate Specifications

• Wafer Size: 10 × 10 × 1.0 mm, thickness tolerance ±0.05 mm
• Wafer Orientation: (100) ±0.5°
• Polishing: Two sides CMP polished, free of subsurface damage
• Surface Finish (RMS or Ra): < 10 Å
• Package: Class 100 plastic bag in a wafer container, packed under Class 1000 clean-room conditions
• Lattice Constant: a = 3.792 Å, pseudocubic
• Warning: LaAlO₃ crystal has a visible twin on the polished surface, which is normal in nature. Please see the image below.

• For detailed physical properties of LaAlO₃ crystal, please click here
• For a typical crystal rocking curve, please click here
• For MSDS, please click here
• For the AFM of LaAlO₃, please click here
• If you need a certificate of analysis, please click here

Typical Physical Properties

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