LaAlO3 (100), 1" x 0.5mm wafer, 2 SP - LAOa25D05C2

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LaAlO3 (100), 1" x 0.5mm wafer, 2 SP - LAOa25D05C2

Minimum Order: $20 (equipment), $100 (crystals)

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$345.00 USD

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SKU: : \LAOa25D05C2

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LaAlO₃ single crystal provides a good lattice match to many materials with a perovskite structure. It is an excellent substrate for epitaxial growth of high-T_c superconductors, as well as magnetic and ferroelectric thin films. The dielectric properties of LaAlO₃ crystal are well suited for low-loss microwave and dielectric resonance applications.

Substrate Specifications

Wafer Size: 1" diameter ±0.5 mm × 0.5 mm thickness ±0.05 mm
Wafer Orientation: (100) ±0.5°
Edge Orientation: <001> ±1°, 16 mm length
Polishing: CMP polished, free of subsurface damage
Surface Finish (RMS or Ra): < 10 Å
Package: Class 100 plastic bag in a wafer container, packed under Class 1000 clean-room conditions
Lattice Constant: a = 3.792 Å, pseudocubic
Warning: LaAlO₃ crystal has a visible twin on the polished surface, which is normal in nature. Please see the image below.

Typical Physical Properties

Crystal Structure	Pseudocubic; a = 3.792 Å
Growth Method	Czochralski
Density	6.52 g/cm³
Melting Point	2080°C
Thermal Expansion	10 × 10^-6/°C
Dielectric Constant	~25
Loss Tangent at 10 GHz	~3 × 10^-4 at 300 K; ~0.6 × 10^-4 at 77 K
Color and Appearance	Transparent to brown depending on annealing conditions; visible twins on the polished substrate
Chemical Stability	Insoluble in mineral acids at 25°C and soluble in H₃PO₃ at >150°C