LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3  crystal are well-suitable for low-loss microwave and dielectric resonance applications.

Specifications

Wafer Size:                    20x20 x  0.5 mm thickness +/-0.05 mm,

Wafer Orientation:         (100) +/-0.5 Deg 

Polishing:                       Two sides  CMP polished with free sub-surface damage. Please choose one side or  two sides polished from " option "

Surface finish (RMS or Ra) :     < 10A

Packed                          Under 1000 class clean room. (EPI ready) and in a 100-grade plastic bag in a wafer container.

Lattice Constant   a=3.792Å Pseudocubic
Warning:     LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below

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