Name: One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate
Brand: MTI
SKU: FmYBCOonSTOa101005S1FT300nm
Price: 299.95 USD
Availability: InStock

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One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate

13 in stock

$299.95 USD

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SKU: : \FmYBCOonSTOa101005S1FT300nm

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Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm in diameter

MTI Corp joins with several research institutes around the world, to finally make high Tc superconducting epitaxial thin film commercially available at an affordable price. MTI supplies high quality double side epitaxial thin film up to 3" diameter on LaAlO3, LSAT, Al2O3 and SrTiO3 single crystal substrate by a unique technology.

This will make YBCO thin film available at low cost. Researchers don't need to grow thin film any more, but concentrate their talent on HTSC film related devices, such as microwave filter for wireless and HTSC Squid.

Main Specifications of HTS Film

Epitaxial thin Film Composition	<100> YBCO
Film dimension both for one side or double side film	YBCO / LaAlO3 10x10 mm ~ 3" dia. YBCO / LSAT 10x10 mm ~ 2" dia. YBCO / Al2O3 10x10 mm ~3" dia YBCO / STO 10x10 mm ~ 1" dia.
Epitaxial FWHM	< 0.2 ^o
Critical Transition Temperature Tc	90 K+/-5%
Transition Temp. range ΔTc	< 0.5 K
Critical Current Jc	2~3 MA/cm2 @ 77K 0T
Surface Resistivity Rs	< 1 m Ohm @ 10 GHz, 77K, 0T
Thin film thickness	100 ~ 500 nm
Uniformity for 2" wafer	Thickness 300-400nm Tc 86K- 90K Jc 3 +/-0.5 MA/cm² @ 80% wafer center. Note: Must store the sample in dry box and vacuum oven , other wise Tc may be lower. Anealing sample at 500oC for < 30 minute may recover Tc
Package	Sealed in Vacuum in a plastic box and bag.

Note: YBCO is very sensitive to moisture, and must be stored in desiccator box.


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Vacuum Storage Chambers	Dicing saw	Film Coater

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One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate

One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate

Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm in diameter

This will make YBCO thin film available at low cost. Researchers don't need to grow thin film any more, but concentrate their talent on HTSC film related devices, such as microwave filter for wireless and HTSC Squid.

Main Specifications of HTS Film

Epitaxial thin Film Composition

<100> YBCO

Film dimension

both for one side or double side film

YBCO / LaAlO3 10x10 mm ~ 3" dia.

YBCO / LSAT 10x10 mm ~ 2" dia.

YBCO / Al2O3 10x10 mm ~3" dia

YBCO / STO 10x10 mm ~ 1" dia.

Epitaxial FWHM

< 0.2 ^o

Critical Transition Temperature Tc

90 K+/-5%

Transition Temp. range ΔTc

< 0.5 K

Critical Current Jc

2~3 MA/cm2 @ 77K 0T

Surface Resistivity Rs

< 1 m Ohm @ 10 GHz, 77K, 0T

Thin film thickness

100 ~ 500 nm

Uniformity for 2" wafer

Thickness 300-400nm

Tc 86K- 90K

Jc 3 +/-0.5 MA/cm² @ 80% wafer center.

Note:
Must store the sample in dry box and vacuum oven , other wise Tc may be lower. Anealing sample at 500oC for < 30 minute may recover Tc

Package

Sealed in Vacuum in a plastic box and bag.

One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate

One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate

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Item Added to Quote!

Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm in diameter

This will make YBCO thin film available at low cost. Researchers don't need to grow thin film any more, but concentrate their talent on HTSC film related devices, such as microwave filter for wireless and HTSC Squid.

Main Specifications of HTS Film

Epitaxial thin Film Composition

<100> YBCO

Film dimension

both for one side or double side film

YBCO / LaAlO3 10x10 mm ~ 3" dia.

YBCO / LSAT 10x10 mm ~ 2" dia.

YBCO / Al2O3 10x10 mm ~3" dia

YBCO / STO 10x10 mm ~ 1" dia.

Epitaxial FWHM

< 0.2 o

Critical Transition Temperature Tc

90 K+/-5%

Transition Temp. range ΔTc

< 0.5 K

Critical Current Jc

2~3 MA/cm2 @ 77K 0T

Surface Resistivity Rs

< 1 m Ohm @ 10 GHz, 77K, 0T

Thin film thickness

100 ~ 500 nm

Uniformity for 2" wafer

Thickness 300-400nm

Tc 86K- 90K

Jc 3 +/-0.5 MA/cm2 @ 80% wafer center.

Note:Must store the sample in dry box and vacuum oven , other wise Tc may be lower. Anealing sample at 500oC for < 30 minute may recover Tc

Package

Sealed in Vacuum in a plastic box and bag.

< 0.2 ^o

Jc 3 +/-0.5 MA/cm² @ 80% wafer center.

Note:
Must store the sample in dry box and vacuum oven , other wise Tc may be lower. Anealing sample at 500oC for < 30 minute may recover Tc