Specifications of Substrate

• Orientation: <0001> +/-0.5
• Dimension: 1" x 0.26 +/-0.03 mm
• Polished: One side epi polished
• Surface Roughness: < 5 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight: 40.10
• Unit Cell: Hexagonal
• Lattice constant: a =3.07 A c = 10.53 A
• Stacking sequence: ABCB (4H)
• Growth Technique: MOCVD
• Polishing : Silicon face polished
•  Band Gap: 3.26eV ( Indirect)
• Conductivity type: N
• TTV/Bow/Warp: <=35 um 
• Micropipe Density: <=30 cm^-2
• Resistivity: 0.015~0.5 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
• Thermal Conductivity @ 300K: 4W / cm . K
• Hardness: 9 Mohs

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