Si (100) 10x10x0.5mm, 2SP, P type B doped, R: 1-32 ohm-cm - SIBa101005

1 1

Si (100) 10x10x0.5mm, 2SP, P type B doped, R: 1-32 ohm-cm - SIBa101005S2R1

Minimum Order: $20 (equipment), $100 (crystals)

Shipping and handling will be applied

96 in stock

$19.00 USD

Sale Email for Lead Time

SKU: : \SIBa101005S2R1

Product variants

Quantity

View full details

This P-type silicon (Si) single-crystal substrate is boron-doped and features a (100) crystallographic orientation. It is suitable for semiconductor research, thin-film deposition, materials characterization, and laboratory applications requiring a polished silicon substrate.

The substrate measures 10 mm × 10 mm × 0.5 mm and has an electrical resistivity of 1–32 Ω·cm. Both surfaces are polished to a surface roughness of less than 5 Å RMS, providing a smooth surface for research and experimental processing.

SPECIFICATIONS

Product Type	P-type silicon single-crystal substrate.
Material	Single-crystal silicon (Si).
Conductivity Type	P-type.
Dopant	Boron (B).
Electrical Resistivity	1–32 Ω·cm. For accurate resistivity measurements, a four-point probe testing instrument is recommended. View Portable Four-Point Probe Resistivity Testing Instrument.
Substrate Dimensions	10 mm × 10 mm × 0.5 mm.
Crystal Orientation	(100).
Surface Polishing	Double-side polished (DSP).
Surface Roughness	< 5 Å RMS (less than 0.5 nm RMS).
Applications	Semiconductor materials research Thin-film deposition and characterization Silicon substrate processing experiments Electrical resistivity measurements Academic and industrial laboratory research
Related Products & Equipment	Other Crystal Substrates A–Z Plasma Cleaners Wafer Containers Diamond Blade Dicing Saws Thin-Film Coating Equipment