Specifications of Substrate

• Orientation: on axis  <0001>+/- 0.5 degree
• Dimension:   4"( +/-0.015'')Dx0.35mm( +/-25um)
• Polished:  two sides epi polished
• Surface Roughness: < 10 A by AFM
• Please click here to  identify the Si face from C of this double side polished wafers

 Typical Properties of Single Crystal SiC

• Formula weight:  40.10
• Unit Cell: Hexagonal
• Lattice constant: a =3.07 A       c = 10.53 A
• Stacking sequence: ABCB  (4H)       
•  Orientation:  (0001)
• Polishing :Silicon face EPI- polished
•  Band Gap:   3.26eV ( Indirect)
• Conductivity type:  Semi-insulating
• Resistivity:  >1E5 ohm-cm
• TTV/Bow/Warp: <=25 um
• Micropipe Density: <=15 cm^-2
  
• Dielectric Constant:   e (11) = e (22) = 9.66    e (33) = 10.33
• Thermal Conductivity :N/A
• Hardness: 9 Mohs
• Ra: <= 1nm
  

Other SiC	GaN	AlN template	ZnO
Sapphire	Dicing Saw	Wafer Containers	Film Coater