Specifications of Substrate

• Orientation:  <0001> +/-0.5
• Dimension:   10x10 x 0.26  +/-0.03 mm
• Polished:  two sides epi polished
• Surface Roughness:     < 10 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight: 40.10
• Unit Cell: Hexagonal
• Lattice constant: a =3.08 A       c = 15.117 A
• Stacking sequence: ABCACB  (6H)
• Growth Technique: MOCVD         
• Polishing:  Silicon face polished
•  Band Gap: 3.03 eV ( Indirect)
• Conductivity type:  N
• TTV/Bow/Warp: <25 um
• Micropipe Density:  <30 cm^-2
• Resistivity:  0.02~0.2 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66    e (33) = 10.33
• Thermal Conductivity @ 300K: 4W / cm . K
• Hardness:  9 Mohs

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