Specifications of Substrate

• Orientation: <0001> +/-0.5
• Dimension:   5x5x0.33 +/-0.025 mm
• Polished:  two sides epi polished
• Surface Roughness:  < 10 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight: 40.10
• Unit Cell:  Hexagonal
• Lattice constant: a =3.08 A, c = 15.117 A
• Stacking sequence: ABCACB  (6H)
• Growth Technique:  MOCVD         
• Polishing: Silicon face polished
•  Band Gap: 3.03eV ( Indirect)
• Conductivity type:  N
• TTV/Bow/Warp: <25 um
• Micropipe Density:  <30 cm^-2
• Resistivity:  0.02~0.2 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66, e (33) = 10.33
• Thermal Conductivity @ 300K:  5 W / cm . K
• Hardness: 9 Mohs
• TTV/Bow/Warp: <25 um
• Micropipe Density: <30 cm^-2

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