Silicon Nitride Film

• Si3N4 Film-coated by low-stress LPCVD method
  
• Si3N4 Thickness:   1.3um  +/- 5%
• Si3N4 covers both sides on Corning 7980 0F fused silica  ( Warning: the Si3N4 film may have stressed induced microcracking resulted from the large difference of thermal expansion coefficient between Si3N4 and SiO2 fused silica )
• Nitride Thickness: 13000 Angstroms +/-5%
• Nitride Ref Index : 2.30 +/-0.05

 
• UV Grade Fused Silica (Corning 0F 7980 HPFS)
• Size: 100.0 (+/- 0.20) mm in Dia x 0.5 (+/- 0.10) mm
• Edge: CNC Ground
• Surface Quality: 60/40 or beer
• Non-effective Area: 2.0 mm border
• TTV: < 20 microns
• Polishing: Two sides polished (60/40)
• Average Surface Roughness Ra: =< 5 A RMS

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

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