SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
69 in stock
Regular price
$12.95 USD
Regular price
Sale price
$12.95 USD
Unit price
per
SKU: : \FmSOIa05050625C1
Specifications
Device Layer | ||
Size: |
5mmx5mm |
|
Type/Dopant: |
|
N type/P-doped |
Orientation: |
|
<1-0-0>+/-0.5 degree |
Thickness: |
|
2.5±0.5µm |
Resistivity: |
|
1-4 ohm-cm |
Finish: |
Front Side Polished |
|
Buried Thermal Oxide: | ||
Thickness: |
|
1.0 um +/- 0.1 um |
Handle Wafers: | ||
Type/Dopant |
P type/B-doped |
|
Orientation |
|
<1-0-0>+/-0.5 degree |
Resistivity: |
10-20 ohm.cm |
|
Thickness: |
|
625 +/- 15 um |
Finish: |
|
As received (not polished) |
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