SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
12 in stock
Regular price
$329.00 USD
Regular price
Sale price
$329.00 USD
Unit price
per
SKU: : \FmSOIa152D0625C1
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PSpecifications
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Device Layer |
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Diameter: |
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6" |
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Type/Dopant: |
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N type/P-doped |
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Orientation: |
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<1-0-0>+/-.5 degree |
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Thickness: |
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2.5±0.5µm |
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Resistivity: |
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1-4 ohm-cm |
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Finish: |
Front Side Polished |
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Buried Thermal Oxide: |
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Thickness: |
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1.0um +/- 0.1 um |
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Handle Wafers: |
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Type/Dopant |
P Type, B doped |
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Orientation |
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<1-0-0>+/-.5 degree |
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Resistivity: |
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10-20 ohm-cm |
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Thickness: |
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625 +/- 15 um |
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Finish: |
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As-received (not polished) |
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