Thermal oxide 

Research Grade , about 80 % useful  area

• SiO2 layer on 4" Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/- 10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          P-type/ B-doped 
• Resistivity:                 1-10 ohm.cm  (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         4"  dia +/- 0.5 mm x 0.525 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        one side  polished
• Surface roughness, Ra: < 5A (RMS)

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