Thermal oxide Layer

• Research Grade, about 80% useful area
• SiO2 layer on 4" Silicon wafer
• Oxide layer thickness: 300 nm (3000A)  +/-10%
• Refractive index - 1.455

• Conductive type:          N-type/ Sb-dped Resistivity:               
• Resistivities:                 0.01-  0.02 ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                             4" +/- 0.5 mm x 0.525 mmth
• Orientation:                   (100) +/- 0.5^o
• Polish:                          one side polished
• Surface roughness, Ra: < 5A (RMS)

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