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Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

29 in stock

Regular price $109.95 USD
Regular price Sale price $109.95 USD
Sale Email for Lead Time

SKU: : \Fm300SOonSIBa100D05C1R0001

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Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 100mm Silicon wafer
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          P-type/ B-doped 
  • Resistivity:                  R:0.001-0.005ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         100mm+/- 0.5 mm x 0.5 mm
  • Orientation:                (100) +/- 0.5o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)

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