Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 2" Silicon wafer
• Oxide layer thickness: 50 nm   ( 500A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N- type/ Un- doped 
• Resistivity:                  >1000 ohm-cm
• Size:                          50.8 diameter +/- 0.5 mm x 0.3 +/- 0.025 mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughnessm, Ra: < 5A(RMS)

 Related Products

Thin Films  A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater