VGF-GaAs (100) orientation, Si-doped, 10x10x 0.5mm, 1sp - GASia101005S1US
VGF-GaAs (100) orientation, Si-doped, 10x10x 0.5mm, 1sp - GASia101005S1US
Minimum Order: $20 (equipment), $100 (crystals)
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$179.00 USD
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SKU: : \GASia101005S1US
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GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
resistivity: (2.56-3.55)x10^-3 ohm.cmGrowing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
Ra(Average Roughness) : < 0.4 nm
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