Ge Wafer Specification

• Growing Method:              VGF
• Orientation:                       (100) +/-0.5 Deg.
• Wafer Size:                       100mm dia x  500 microns  
• Surface Polishing:             Two sides epi polished
• Surface roughness:            RMS or Ra:~ 10 A(By AFM)
• Doping:                              As- Doped
• Conductor type:                 N-type
  
• Resistivity:                         0.173-0.25 ohm.cm (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier concentration:        0.09x10^17 -1.63x10^17/c.c
• Mobility:                             1660-2940 cm^2.v.s
• EPD:                                  < 500 /cm^2
• Ra(Average Roughness) : < 0.4 nm                      
• Package:                            under 1000 class clean room     
  

Typical Properties:

• Structure:                         Cubic, a = 5.6754Å
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:        640