Ge Wafer Specification

• Growing Method:             VGF
• Orientation:                      (100) +/-0.4 Deg.
• Wafer Size:                    100 mm  dia x  500 microns  
• Surface Polishing:           One side  polished
• Doping:                           Ga Doped
• Conductor type:               P-type
• Resistivity:                      0.128-0.327 Ohm.cm (If you would like to measure the resistivity accurately, 
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:       (0.98-10.0) x10^16 /c.c
• Mobility:                          897-2070 cm^2/Vs
• EPD:                               <500 /cm^2
• Ra(Average Roughness) :  < 0.4 nm
• 
  Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
•  Density:                          5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640