Ge Wafer Specification

• Growing Method:                VGF
• Orientation:                        (100) +/-0.4 Deg.
• Wafer Size:                       100mm  dia x  400 microns  
• Surface Polishing:              Two sides   polished
• Surface roughness:             < 8 A ( by AFM)
• Doping:                              Ga Doped
• Conductor type:                  P-type
  Carrier Concentration:        (0.64-6.67) x10^18 /c.c
  EPD:                               <500 /cm
  
  
• Resistivity:                         0.0038-0.0158 ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our Portable 4 Probe Resistivity Testing Instrument.)
  
• Ra(Average Roughness) :    < 0.4 nm 
• Package:                          under 1000 class clean room

Typical Properties: 

• Structure:                         Cubic, a = 5.6754Å
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640