Ge Wafer Specification

• Growing Method:                 VGF
• Orientation:                         (100) +/-0.5 Deg.
• Wafer Size:                        50(+/_0.3) mm dia x  175(+/_15) microns 
  
• Surface Polishing:               Both  sides  polished
• Surface roughness:              RMS or Ra: ~10 A(By AFM)
• Doping:                              Ga Doped
• Conductor type:                  P-type
• Resistivity:                         0.008-0.021Ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:        (0.4-2.1)x10^18/cm^3.
• Mobility:                            386-693  cm^2/V.S
• EPD:                                      <=500 /cm^2
• Ra(Average Roughness) :   < 0.4 nm 
• Package:                          under 1000 class clean room      

Typical Properties:

• Structure:                         Cubic, a = 5.6754Å
•  Density:                          5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640