InP single crystal wafer

Orientation:                       (100)
Size:                                 2" diameter x 0.35 mm
Doping:                             Undoped
Conducting type:                S-C
Polish:                              one side polished
Resistivity:                        (2.59-3.8) x 10^-1 ohm.cm
Mobility:                            (4100-4350) cm^2/V.S
EPD:                                 <5000 /cm^2
Carrier Concentration:       (3.78-5.59) x 10^15 /cmE-3

EPI ready surface and packing

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